Semilattice transversals of regular bands I

Every regular band can be isomorphically embedded into a regular band which has a semilattice transversal. The latter constitute the variety of regular split bands, whose subvariety lattice is isomorphic to the lattice of regular band varieties.     

Enhanced Static Modulated Fourier Transform Spectrometer for Fast Approximation in Field Application

We discuss the data sampling frequency, the spectral resolution, and the limit for non-aliasing in the static modulated Fourier transform spectrometer based on a modified Sagnac interferometer. The measurement was performed in a very short 4 ms, which is applicable for real time field operation. The improved spectrometer characteristics were used to investigate the spectral properties of an InGaAs light emitting diode. In addition, The measured spectral peak was shifted from 6420 cm⁻¹ to 6365 cm⁻¹, as the temperature increased from 25 °C to 40 °C, when the operating current is fixed to be 0.55 A. As the applied current increased from 0.30 A to 0.55 A at room temperature, the spectral width was broadened from 316 cm⁻¹ to 384 cm⁻¹. Compared to the conventional Fourier transform spectrometer, the measured spectral width by the static modulated Fourier transform spectrometer showed a deviation less than 10%, and the spectral peak shift according to the temperature rise showed a difference within 2%.     

Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies

Al₂O₃ insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n‐type and (0001)‐oriented. The substrate surface and the early stages of Al₂O₃/n‐GaN(0001) interface formation were characterized in situ under ultra‐high vacuum conditions by X‐ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al₂O₃ compound in the deposited film for which the EA was 1.6 eV. The Al₂O₃ film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al₂O₃/n‐GaN(0001) valence band offset (VBO) is ?1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV.     

基于BiOCl-Fe2O3@TiO2介孔复合材料的光电化学合成氨性能研究

传统合成氨工艺存在能耗高、污染严重的问题. 因此, 高效、低能耗绿色合成氨工艺的开发迫在眉睫. 光电化学以H₂O和N₂为原料, 可以在太阳光驱动下, 在常温常压条件下实现氨的合成, 因而受到广泛重视. 但总的来说, 效率和产率都达不到实际要求. 新型高效催化剂及工艺的开发是提高合成氨产率及效率的关键. 非贵金属催化剂具备成本低、来源广泛、可操作性强的优势, 有利于光电化学合成氨的产业化. 本实验采用溶胶凝胶结合原位热裂解的方法制备了分散性好、结构均匀的BiOCl-Fe₂O₃@TiO₂复合材料, 对其物相、微观结构、表面状态、光学性能、电学性能等方面进行了系统表征, 并探究了该材料在常温常压下光电化学合成氨的催化活性. 结果表明, 同纯介孔TiO₂相比_, BiOCl-Fe₂O₃@TiO₂的吸收带隙变窄, 可见光吸收能力增强, 光生载流子的利用率增加, 光电合成氨的产率提升了7倍, 且BiOCl-Fe₂O₃@TiO₂显示了优异的化学稳定性. 本研究工作为绿色合成氨催化材料及工艺设计提供了新思路.     

Axisymmetric bifurcation analysis in soils by the tangential-subloading surface model

This article discusses localized bifurcation modes corresponding to shear band formation and diffuse bifurcation modes corresponding to bulge formation for cylindrical soil specimen subjected to an axisymmetric load under undrained conditions. We employ the tangential-subloading surface model, which exhibits the characteristic regimes of the governing equations: elliptic, hyperbolic and parabolic. Also, conditions for shear band formation, shear band inclination, diffuse bulging formation, and the long and short wavelength limits of diffuse bulging modes are discussed in relation to material properties and their state of stress, i.e. the stress ratio and the normal-yield ratio. Tangential-plastic strain rate term is required for the analyses of shear band and diffuse bulging. The shear band and the diffuse bulging are generated in not only normal-yield but also subyield states and they are severely affected by the normal-yield ratio describing the degree of approach to the normal-yield state.     

Diffuse mode bifurcation of soil causing convection-like shear investigated by group-theoretic image analysis

Diffuse mode bifurcation of soil under plane-strain compression test is shown, by means of an image analysis based on group-theoretic bifurcation theory, to trigger convection-like shear and to precede shear band formation. First digital photos of Toyoura sand specimens are processed by PIV (particle image velocimetry) to gather digitized images of deformation. Next bifurcation from a uniform state is detected by expanding these images into the double Fourier series and finding a predominant harmonic diffuse bifurcation mode based on that theory. This harmonic bifurcation mode, which is the mixture of a few harmonic functions, expresses complex convection-like shear. Last bifurcation from a non-uniform state is detected by decomposing each image into a few images with different symmetries to extract non-harmonic diffuse bifurcation modes. Diffuse modes of bifurcation, which hitherto were hidden behind predominant uniform compressive deformation, have thus been made transparent by virtue of the group-theoretic image analysis proposed. A possible course of deformation suggested herein is the evolution of diffuse mode bifurcation with a convection-like bifurcation mode breaking uniformity and symmetry, followed by the formation of shear bands through localization.     

Shear Band Formation in Fe–Cr–Mo–V–B–Si Amorphous Alloy under Nanoindentation

The formation of shear bands in Fe–Cr–Mo–V–B–Si amorphous alloy under nanoindentation Is studied. The indentation process is considered against the background of shear band formation in the amorphous material.     

剪切带状分叉

本文从扩散型解法出发，结合实验，揭示了剪切带状分叉的主要特征；进而，论述材料分叉与结构屈曲（分叉）的不同之处。文中结果表明：在诱发剪切带过程中，材料内空洞的激化速率是控制因素而不在于空洞体积比的自身数量。     

Adiabatic shear band localization of inelastic single crystals in symmetric double-slip process

Summary The main objective of the present paper is the development of a viscoplastic regularization procedure valid for an adiabatic dynamic process for multi-slips of single crystals. The next objective is to focus attention on the investigation of instability criteria, and particularly on shear band localization conditions.To achieve this aim, an analysis of acceleration waves is given, and advantage is taken of the notion of the instantaneous adiabatic acoustic tensor. If zero is an eigenvalue of the acoustic tensor, then the associated discontinuity does not propagate, and one speaks of a stationary discontinuity. This situation is referred to as the strain localization condition, and corresponds to a loss of hyperbolicity of the dynamical equations. It has been proved that for an, adiabatic process of rate-dependent (elastic-viscoplastic) crystal, the wave speed of discontinuity surface always remains real and different from zero. It means that for this case the initial-value problem is well-posed. However, for an adiabatic process of rate-independent(elastic-plastic) crystal, the wave speed of discontinuity surface can be equal zero. Then the necessary condition for a localized plastic deformation along the shear band to be formed is as follows: the determinant of the instantaneous adiabatic acoustic tensor is equal to zero. This condition for localization is equivalent to that obtained by using the standard bifurcation method. Based on this idea, the conditions for adiabatic shear band localization of plastic deformation have been investigated for single crystals. Particular attention has been focused on the discussion of the influence of thermal expansion, thermal plastic, softening and spatial covariance effects on shear band localization criteria for a planar model of an f.c.c. crystal undergoing symmetric primary-conjugate double slip. The results obtained have been compared with available experimental observations.Finally, it is noteworthy that the viscoplasticity regularization procedure can be used in the developing of an unconditionally stable numerical integration algorithm for simulation of adiabatic inelastic flow processes in ductile single crystals, cf. [21].The paper has been prepared within research programme sponsored by the Committee of Scientific Research under Grant 3 P404 031 07.